Transparent Flexible Zinc–Indium–Tin Oxide Thin-Film Transistors Fabricated on Polyarylate Films
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概要
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Transparent flexible displays can be realized using active matrix organic light emitting device (AMOLED) with transparent electrodes on transparent plastic substrates. In this study, we developed low-temperature, high-performance [ZITO, $\text{ZnO}:\text{In$_{2}$O$_{3}$}:\text{SnO$_{2}$}=3:1:1$ molar ratio] thin-film transistors (TFTs) on polyarylate films. After optimizing the sputtering condition, the ZITO TFT with an ITO electrode had a high mobility of 16.93 cm2 V-1 s-1, and an SS of 0.39, while the ZITO TFT with a ZTO:B electrode showed no hysteresis on sweeping, a mobility of 2.29 cm2 V-1 s-1 and an SS of 0.18.
- 2010-05-25
著者
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Cheong Woo-Seok
Transparent Electronics Team, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
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Jun-Yong Bak
Transparent Display Team, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
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Bak Jun-Yong
Transparent Display Team, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
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Kim Hong
Nanosemiconductor, Korea Maritime University, 1 Dongsam-dong, Youngdo-gu, Busan 606-791, Korea
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Woo-Seok Cheong
Transparent Display Team, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
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Hong Seung
Nanosemiconductor, Korea Maritime University, 1 Dongsam-dong, Youngdo-gu, Busan 606-791, Korea
関連論文
- Transparent Flexible Zinc–Indium–Tin Oxide Thin-Film Transistors Fabricated on Polyarylate Films
- DC–DC Converters Using Indium Gallium Zinc Oxide Thin Film Transistors for Mobile Display Applications
- Metal-Doped Oxide Electrodes for Transparent Thin-Film Transistors Fabricated by Direct Co-Sputtering Method
- High-Mobility Transparent SnO2 and ZnO–SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators