Amorphous In–Ga–Zn–O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays
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概要
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In this paper, we analyze application of amorphous In–Ga–Zn–O thin film transistors (a-InGaZnO TFTs) to current-scaling pixel electrode circuit that could be used for 3-in. quarter video graphics array (QVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compare to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-InGaZnO TFT pixel circuit can compensate for the drive TFT threshold voltage variation ($\Delta V_{\text{T}}$) within acceptable operating error range.
- 2009-03-25
著者
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Kanicki Jerzy
Organic & Molecular Electronics Laboratory Eecs Department The University Of Michigan
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Kumomi Hideya
Canon Inc. Device Development Center
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Chen Charlene
Organic and Molecular Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A.
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Fung Tze-Ching
Organic and Molecular Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A.
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Abe Katsumi
Canon Research Center, Canon Inc., 30-2 Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan
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Kanicki Jerzy
Organic and Molecular Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A.
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