Selective Nucleation-based Epitaxy (SENTAXY): A Novel Approach for Thin Film Formation

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概要

• 論文の詳細を見る
• 1997-03-30

著者

• Yonehara Takao

  Canon Inc. Device Development Center

• KUMOMI Hideya

  Canon Inc., Device Development Center

• Kumomi Hideya

  Canon Inc. Device Development Center:(present Address)canon Inc. R&d Headquarters

• Kumomi Hideya

  Canon Inc. Device Development Center

• YONEHARA Takao

  Canon Inc., Device Development Center

関連論文

• Selective Nucleation-based Epitaxy (SENTAXY): A Novel Approach for Thin Film Formation
• Selective Nucleation Based Epitaxy(SENTAXY) : A Novel Approach for Thin Film Formation
• Amorphous In–Ga–Zn–O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays
• Electronic State of Amorphous Indium Gallium Zinc Oxide Films Deposited by DC Magnetron Sputtering with Water Vapor Introduction
• Scaling of Coplanar Homojunction Amorphous In--Ga--Zn--O Thin-Film Transistors

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