Scaling of Coplanar Homojunction Amorphous In--Ga--Zn--O Thin-Film Transistors

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概要

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• Channel length (L) and width (W) scaling of amorphous In--Ga--Zn--O (a-IGZO) thin-film transistors (TFTs) have been investigated by coplanar homojunction a-IGZO TFTs. The fabricated TFTs have a mobility around 12 cm²V^-1s^-1, sub-threshold slope (S) of {\sim}110 mV/decade, threshold voltage around 0.3 V and off-current below 10^{-13} A. The TFTs with L > 5 μm have the reduced transconducance (g_{\text{m}}) at lower V_{\text{GS}}, however, the short L < 5 μm TFTs have the g_{\text{m}} reduction at higher V_{\text{GS}}. Even though the TFTs with smaller channel length (L \leq 5 μm) show proper switching characteristics, threshold voltage lowering and sub-threshold slope degradation are clearly observed.

• 2013-03-25

著者

• Kumomi Hideya

  Canon Inc. Device Development Center

• Abe Katsumi

  Canon Research Center, Canon Inc., 30-2 Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan

• Baek Gwanghyeon

  Displays and Detectors Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, U.S.A.

• Kanicki Jerzy

  Displays and Detectors Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, U.S.A.

• Abe Katsumi

  Canon Research Center, Canon Inc., Ota, Tokyo 146-8501, Japan

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• Scaling of Coplanar Homojunction Amorphous In--Ga--Zn--O Thin-Film Transistors

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