Ag8SiTe6: A New Thermoelectric Material with Low Thermal Conductivity
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概要
- 論文の詳細を見る
Here, we introduce a new thermoelectric material: Ag8SiTe6. Ag8SiTe6 indicated p-type semiconductor characteristics. The crystal structure of Ag8SiTe6 was quite complicated, which led to a very low thermal conductivity of 0.23 W m-1 K-1 at room temperature. A relatively high thermoelectric figure of merit of 0.48 was obtained at 800 K, which was mainly due to the very low thermal conductivity.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-01-25
著者
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MUTA Hiroaki
Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka
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Yamanaka Shinsuke
Division Of Sustainable Energy And Environmental Engineering Graduate School Of Engineering Osaka Un
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Charoenphakdee Anek
Division Of Sustainable Energy And Environmental Engineering Graduate School Of Engineering Osaka Un
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UNO Masayoshi
Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka
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Kurosaki Ken
Division Of Sustainable Energy And Environmental Engineering Graduate School Of Engineering Osaka University
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Uno Masayoshi
Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Charoenphakdee Anek
Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Yamanaka Shinsuke
Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Muta Hiroaki
Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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