High-Thermoelectric Figure of Merit Realized in p-Type Half-Heusler Compounds: ZrCoSnxSb1-x
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概要
- 論文の詳細を見る
We studied the thermoelectric properties of heavily Sn-doped ZrCoSb half-Heusler compounds, ZrCoSnxSb1-x ($x\leq 0.15$), to develop p-type thermoelectric materials. With increasing Sn content $x$, electrical resistivity decreased and the sign of the thermoelectric power changed from negative to positive. Thermal conductivity was reduced by an alloy scattering effect between Sn and Sb. A high figure of merit ($\mathit{ZT}$) was obtained: $\mathit{ZT} = 0.45$ at 958 K in ZrCoSn0.1Sb0.9. This $\mathit{ZT}$ is approximately 2-fold higher than those of the p-type half-Heusler compounds that have been reported to date.
- Japan Society of Applied Physicsの論文
- 2007-07-25
著者
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MUTA Hiroaki
Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka
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Yamanaka Shinsuke
Division Of Sustainable Energy And Environmental Engineering Graduate School Of Engineering Osaka Un
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Sekimoto Takeyuki
Division Of Sustainable Energy And Environmental Engineering Graduate School Of Engineering Osaka Un
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Kurosaki Ken
Division Of Sustainable Energy And Environmental Engineering Graduate School Of Engineering Osaka University
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Sekimoto Takeyuki
Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yamanaka Shinsuke
Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Muta Hiroaki
Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kurosaki Ken
Division of Sustainable Energy and Environmental Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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