Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors

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概要

• 論文の詳細を見る

• The “turn-around” of threshold voltage in high gate electric field stressed p-channel power vertical double-diffused metal–oxide–semiconductor (VDMOS) transistors was observed and analyzed in details. This unexpected effect was observed only in devices stressed by enough high positive gate voltages, leading to the gate electric fields above 6.3 MV/cm, and it was more pronounced in those stressed by higher voltages, when threshold voltage shift exhibited very strong dependence on stressing time. The quantitative analysis of the results obtained revealed that stress-induced instabilities of the gate oxide charge and interface traps, due to a complex electrochemical processes occurring in the gate oxide and at silicon–oxide interface during the stressing, were responsible for the observed “turn-around” effect.

• 2008-08-25

著者

• Golubovic Snezana

  Faculty Of Electronic Engineering University Of Nis Beogradska

• Davidovic Vojkan

  Faculty Of Electronic Engineering University Of Nis Beogradska

• Djoric-veljkovic Snezana

  Faculty Of Technology University Of Nis

• Stojadinovic Ninoslav

  Faculty Of Electronic Engineering University Of Nis Beogradska

• Dimitrijev Sima

  Griffith School of Engineering, Griffith University, Nathan, Queensland 4111, Australia

• Dankovic Danijel

  Faculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 14, 18000 Niš, Serbia

• Manić Ivica

  Faculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 14, 18000 Niš, Serbia

• Manić Ivica

  Faculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 14, 18000 Niš, Serbia

関連論文

• Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors
• Temperature and Gate Bias Effects on Gamma-Irradiated Al-Gate Metal-Oxide-Semiconductor Transistors
• Modeling of γ-Irradiation and Lowered Temperature Effects in Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors

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