Modeling of γ-Irradiation and Lowered Temperature Effects in Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors

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概要

• 論文の詳細を見る

• In this paper the results of investigation of γ-irradiation and lowered temperature effects on commercial n-channel power vertical double-diffused metal-oxide-semiconductor (VDMOS) transistors are presented. By analyzing obtained results, the mechanisms responsible for observed effects are modeled.

• 社団法人応用物理学会の論文
• 1999-08-15

著者

• Golubovic Snezana

  Faculty Of Electronic Engineering University Of Nis Beogradska

• Djoric-Veljkovic Snezana

  Faculty of Technology, University of Nis

• Davidovic Vojkan

  Faculty of Electronic Engineering, University of Nis Beogradska

• Stojadinovic Ninoslav

  Faculty of Electronic Engineering, University of Nis Beogradska

• Davidovic Vojkan

  Faculty Of Electronic Engineering University Of Nis Beogradska

• Djoric-veljkovic Snezana

  Faculty Of Technology University Of Nis

• Stojadinovic Ninoslav

  Faculty Of Electronic Engineering University Of Nis Beogradska

関連論文

• Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors
• Temperature and Gate Bias Effects on Gamma-Irradiated Al-Gate Metal-Oxide-Semiconductor Transistors
• Modeling of γ-Irradiation and Lowered Temperature Effects in Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors

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