Low-Temperature Chemical Vapor Deposition of Anatase TiO2 with Titanium Tetraisopropooxide and H2O2 Vapor
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概要
- 論文の詳細を見る
Polycrystalline anatase TiO2 films have been successfully deposited on Si(100) substrates at a temperature of 250 °C at growth rates of higher than 10 Å/s by atmospheric chemical vapor deposition with titanium tetraisopropooxide as a precursor and H2O2 vapor as an oxidant. The H2O2 vapor enhances the crystallization of the TiO2 amorphous network in the grown films. We also show that TiO2 film obtained by low-temperature deposition with the H2O2 vapor exhibits a photocatalytic activity for the naturally adsorbed carbon impurity on its surface, indicating the applicability of the present technique to the field of photocatalyst coating. The present technique is also applicable to the deposition of anatase TiO2 films on flexible polyimide tapes.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-07-25
著者
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Ito Masashi
Department of Molecular Biology, Mitsubishi Kasei Institute of Life Sciences
-
Hirose Fumihiko
Department Of Electrical Engineering Yamagata Univ.
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Kurita Kazunari
2-3-28 Ekimae-chuo, Saga 840-0810, Japan
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Hirose Fumihiko
Department of Electrical Engineering, Faculty of Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
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Ito Masashi
Department of Electrical Engineering, Faculty of Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
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