Low-Voltage Ultraviolet Detectors Using ZnO Thin-Film Transistor Isolated by B Ion Implantation

スポンサーリンク

概要

• 論文の詳細を見る

• We report on the fabrication of a photo-detector and a photo-inverter adopting ZnO thin-film transistors (TFTs) that have been electrically isolated by implanting B ions onto peripheral ZnO area around active ZnO channel. Our isolated ZnO-TFT exhibited a fine mobility of 0.8 cm2/(V$\cdot$s) and on/off current ratio of ${\sim}10^{4}$. Since the device also showed quite a high threshold voltage of 21 V, it was effective to be a photo-detector under a zero gate bias. When our photo-devices were composed of a ZnO-TFT and a 100 M$\Omega$ resistor, a minimum response time of ${\sim}5$ ms under 364 nm ultraviolet light was achieved, thereby dynamically showing photo-inverting and detecting behaviors.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-07-25

著者

• Im Seongil

  Institute Of Physics And Applied Physics Yonsei Univrsity

• Song Jonghan

  Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 130-650, Korea

• Bae Heesun

  Department of Physics, University of Seoul, Seoul 130-743, Korea

関連論文

• Optimum Thickness of SiO_2 Layer Formed at the Interface of N-ZnO/P-Si Photodiodes
• Encapsulation of Organic Field-Effect Transistors with Highly Polarizable Transparent Amorphous Oxide
• Low-Voltage Ultraviolet Detectors Using ZnO Thin-Film Transistor Isolated by B Ion Implantation

スポンサーリンク