Optimum Thickness of SiO_2 Layer Formed at the Interface of N-ZnO/P-Si Photodiodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-12-15
著者
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Yeom Han
Institute Of Physics And Applied Physics Yonsei Univrsity
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Choi Y
Yonsei Univ. Seoul Kor
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CHOI Youn
Institute of Physics and Applied Physics, Yonsei Univrsity
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LEE Joon
Institute of Physics and Applied Physics, Yonsei Univrsity
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CHOI Won
Institute of Physics and Applied Physics, Yonsei Univrsity
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IM Seongil
Institute of Physics and Applied Physics, Yonsei Univrsity
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Im Seongil
Institute Of Physics And Applied Physics Yonsei Univrsity
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Choi Youn
Institute Of Physics And Applied Physics Yonsei Univrsity
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Choi Won
Institute Of Physics And Applied Physics Yonsei Univrsity
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Lee Joon
Institute Of Physics And Applied Physics Yonsei Univrsity
関連論文
- Optimum Thickness of SiO_2 Layer Formed at the Interface of N-ZnO/P-Si Photodiodes
- First-Principles Study of the Step Oxidation at Vicinal Si(001) Surfaces
- Encapsulation of Organic Field-Effect Transistors with Highly Polarizable Transparent Amorphous Oxide
- Low-Voltage Ultraviolet Detectors Using ZnO Thin-Film Transistor Isolated by B Ion Implantation