The Complex Mechanisms of Ion-Beam-Induced Deposition

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概要

• 論文の詳細を見る

• We report the results of an investigation of ion-beam-induced deposition (IBID) mechanisms in terms of secondary atoms, secondary electrons, and primary ions. Comparison of the volume of a deposited box with that of the material deposited onto a nearby sidewall shows the significant contribution of secondary particles to IBID. In situ measurement of the Ga+ ion beam angular dependence of the deposition yield and of the sputtering yield shows the significant distinct behavior of deposition and sputtering, indicating that IBID cannot be explained solely in terms of sputtering (secondary atom emission). By varying the current and dwell time of a Ga+ ion beam in spot mode, a doughnut-like structure with a hole or a central tip was obtained, indicating that primary ions probably also contribute to IBID.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-06-25

著者

• Chen Ping

  Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands

• Salemink Huub

  Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands

• Alkemade Paul

  Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands

関連論文

• Smooth and Narrow Nanopillars Fabricated by Ion-Beam-Induced Deposition under Charging Conditions
• The Complex Mechanisms of Ion-Beam-Induced Deposition

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