Stacking Fault Duplication in 6H-SiC Single Crystal

概要

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6H-SiC single crystal was grown by physical vapor transport (PVT). The duplications of several types of stacking fault (SF) such as SF$\langle 24\rangle$, SF$\langle 15\rangle$, and SF$\langle 3111\rangle$ were observed by high-resolution transmission electron microscopy (HRTEM). First-principle calculations revealed that the formation energies of single SF$\langle 24\rangle$ and SF$\langle 15\rangle$ are very low while that of SF$\langle 3111\rangle$ is much higher. Further calculations demonstrated that the continuous SFs possessed larger stress along the $c$-axis than the separated SFs. This suggests that the stress should be the reason for the SF duplication, and the SF can be duplicated under higher $c$-axis stress.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-06-25