Direct Observation of Nanoscale Native Oxide on 6H-SiC Surface and Its Effect on the Surface Band Bending
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概要
- 論文の詳細を見る
The RCA-cleaned 6H-SiC surface has a 1 nm native oxide layer, which was directly observed by high-resolution transmission electron microscopy and confirmed by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. The surface band bending caused by the native oxide layer was studied by synchrotron radiation photoelectron spectroscopy. The binding energy of Si 2p core level for the Ni/oxygen-free SiC interface showed almost zero shift ({<}0.07 eV). However, it red-shifted about 0.34 eV for the Ni/native-oxide/SiC interface, it indicated that negative charged interface states induced in the Ni/native-oxide interface resulted in the upward bending of the interface energy band.
- 2012-10-25
著者
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ZHENG Yan-Qing
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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HUANG Wei
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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CHANG Shao-Hui
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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LIU Xue-Chao
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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SHI Biao
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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ZHOU Tian-Yu
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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LIU Xi
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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YAN Cheng-Feng
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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YANG Jian-Hua
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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SHI Er-Wei
Shanghai Institute of Ceramics, Chinese Academy of Sciences
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ZHANG Wen-Hua
National Synchrotron Radiation Laboratory, University of Science and Technology of China
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ZHU Jun-Fa
National Synchrotron Radiation Laboratory, University of Science and Technology of China
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Yan Cheng-Feng
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
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Liu Xi
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
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Shi Er-Wei
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
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Chang Shao-Hui
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
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Zhang Wen-Hua
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, People's Republic of China
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Zhou Tian-Yu
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
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Liu Xue-Chao
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
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Yang Jian-Hua
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
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Zheng Yan-Qing
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
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Zhu Jun-Fa
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, People's Republic of China
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Shi Biao
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
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- Direct Observation of Nanoscale Native Oxide on 6H-SiC Surface and Its Effect on the Surface Band Bending
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