Observing Electroluminescence from Yellow Luminescence-Like Defects in GaN High Electron Mobility Transistors

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概要

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• A yellow band electroluminescence (EL) characteristic, which might be attributed to the same origin as the yellow luminescence (YL) defects, was observed in GaN high electron mobility transistors (HEMTs) at room temperature. The YL-like defect origin has been tentatively confirmed by comparing EL and photoluminescence (PL) results. To further explore the properties of YL-like EL centers, EL dependence on the drain-to-source and gate-to-source voltage were investigated. The direct comparison between the EL and temperature distribution images from the same GaN HEMT suggests that two distinct EL emission mechanisms exist at the off-state breakdown. The other type of EL emission at off-state is attributed to carrier intravalley transition due to hot carrier generation by impact ionization at localized breakdown sites. This type of hot carrier induced light emission was observed at on-state and off-state operations. The YL-like emission was shown to have a stronger electric field than the hot carrier induced emission.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-05-25

著者

• CHOU Yeong-Chang

  Northrop Grumman Space Technology

• Kung Sheng-Chin

  Department of Chemistry, University of California, Irvine, Irvine, CA 92697, U.S.A.

• Chen Hsiang

  Department of Electrical Engineering, University of California, Irvine, Irvine, CA 92697, U.S.A.

• Lai Zhian

  Department of Electrical Engineering, University of California, Irvine, Irvine, CA 92697, U.S.A.

• Penner Reginald

  Department of Chemistry, University of California, Irvine, Irvine, CA 92697, U.S.A.

• Lai Richard

  Northrop Grumman Corporation, Redondo Beach, CA 90278, U.S.A.

• Wojtowicz Mike

  Northrop Grumman Corporation, Redondo Beach, CA 90278, U.S.A.

• Li Guann-Pyng

  Department of Electrical Engineering, University of California, Irvine, Irvine, CA 92697, U.S.A.

• Chen Hsiang

  Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan, R.O.C.

• Chou Yeong-Chang

  Northrop Grumman Corporation, Redondo Beach, CA 90278, U.S.A.

関連論文

• Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications
• Ta2O5 Polycrystalline Silicon Capacitors with CF4 Plasma Treatment
• Observing Electroluminescence from Yellow Luminescence-Like Defects in GaN High Electron Mobility Transistors

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