Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications
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概要
- 論文の詳細を見る
Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applications where high-speed operation and low-power consumption are essential. In this paper, we report on recent advances in the design, material growth, device characteristics, oxidation stability, and MMIC performance of Sb-based HEMTs with an InAlSb upper barrier layer. The high electron mobility transistors (HEMTs) exhibit a transconductance of 1.3S/mm at VDS=0.2V and an fTLg product of 33GHz-μm for a 0.2μm gate length. The design, fabrication and improved performance of InAlSb/InGaSb p-channel HFETs are also presented. The HFETs exhibit a mobility of 1500cm2/V-sec, an fmax of 34GHz for a 0.2μm gate length, a threshold voltage of 90mV, and a subthreshold slope of 106mV/dec at VDS=-1.0V.
- （社）電子情報通信学会の論文
- 2008-07-01
著者
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Bass Robert
Naval Research Laboratory
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BOOS J.
Naval Research Laboratory
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BENNETT Brian
Naval Research Laboratory
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PAPANICOLAOU Nicolas
Naval Research Laboratory
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ANCONA Mario
Naval Research Laboratory
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CHAMPLAIN James
Naval Research Laboratory
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CHOU Yeong-Chang
Northrop Grumman Space Technology
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LANGE Michael
Northrop Grumman Space Technology
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YANG Jeffrey
Northrop Grumman Space Technology
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PARK Doewon
Naval Research Laboratory
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SHANABROOK Ben
Naval Research Laboratory
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Chou Yeong-Chang
Northrop Grumman Corporation, Redondo Beach, CA 90278, U.S.A.
関連論文
- Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications
- Observing Electroluminescence from Yellow Luminescence-Like Defects in GaN High Electron Mobility Transistors