Saturation Characteristics Simulation of Intersubband Absorption for [(CdS/ZnSe/BeTe)/(ZnSe/BeTe)] Coupled Quantum Wells
スポンサーリンク
概要
- 論文の詳細を見る
The saturation characteristics of II–VI coupled quantum wells (CQWs) were simulated by solving the polarization equation and rate equations. By considering different operation frequency requirements, the dependence of the switching energy ($E_{\text{s}}$) on the ZnSe well thickness was investigated for different pump pulse widths. Each pulse width corresponds to an optimum ZnSe well thickness at which $E_{\text{s}}$ reaches its minimum due to the agreement between the pulse width and the effective relaxation time.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
-
AKIMOTO Ryoichi
Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technol
-
HASAMA Toshifumi
Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technol
-
Akimoto Ryoichi
Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2-1, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Cong Guangwei
Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2-1, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Akita Kazumichi
Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2-1, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Hasama Toshifumi
Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2-1, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Ishikawa Hiroshi
Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2-1, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
関連論文
- Fabrication of High-Mesa Waveguides Based on Wide-Band-Gap II-VI Semiconductors for Telecom Wavelength Applications
- Fabrication of High-Mesa Waveguides Based on Wide-Band-Gap II–VI Semiconductors for Telecom Wavelength Applications
- Saturation Characteristics Simulation of Intersubband Absorption for [(CdS/ZnSe/BeTe)/(ZnSe/BeTe)] Coupled Quantum Wells