Fabrication of High-Mesa Waveguides Based on Wide-Band-Gap II-VI Semiconductors for Telecom Wavelength Applications
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-01-15
著者
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Li Bing
Ultrafast Photonic Devices Laboratory National Institute Of Advanced Industrial Science And Technolo
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AKITA Kazumichi
Tokyo University of Science Faculty of Industrial Science and Technology
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AKIMOTO Ryoichi
Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technol
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HASAMA Toshifumi
Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technol
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TAKANASHI Yoshifumi
Tokyo University of Science Faculty of Industrial Science and Technology
関連論文
- Fabrication of High-Mesa Waveguides Based on Wide-Band-Gap II-VI Semiconductors for Telecom Wavelength Applications
- Intersubband Transition Based on a Novel II-VI Quantum Well Structure for Ultrafast All-Optical Switching
- Improved Waveguide Structure for All Optical Switches based on Intersubband Transition in II-VI Quantum Wells
- Fabrication of High-Mesa Waveguides Based on Wide-Band-Gap II–VI Semiconductors for Telecom Wavelength Applications
- Saturation Characteristics Simulation of Intersubband Absorption for [(CdS/ZnSe/BeTe)/(ZnSe/BeTe)] Coupled Quantum Wells