Hole Mobility Characteristics under Electrical Stress for Surface-Channel Germanium Transistors with High-$\kappa$ Gate Stack

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概要

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• This paper describes device degradation and mobility characteristics for germanium (Ge)-channel p-type metal–oxide–semiconductor field-effect transistors (pMOSFETs) with HfO2 gate dielectrics. In order to understand the effect of trapped charges in high permittivity (high-$\kappa$) gate dielectric and interface-trap states, we compare the hole mobility of the SiGe/SiO2/Si (SGOI) structure before and after applying an electrical stress. It is found that hot-carrier injection (HCI) and constant–voltage Fowler–Nordheim (F–N) stress cause mobility degradation in different mechanism. Even a negative-biased moderate F–N stress will give recovery of hole mobility. These results indicate that the device performance of a surface-channel SGOI device is easily affected by the specific trapped-charge state in high-$\kappa$ dielectrics and interface traps.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Yi Jeong-hyong

  Center For Integrated Systems And Dept. Of Electrical Engineering Stanford University

• Oh Saeroonter

  Center For Integrated Systems And Dept. Of Electrical Engineering Stanford University

• Wong H.-S.

  Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.

• Oh Saeroonter

  Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.

• Yi Jeong-Hyong

  Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, CA 94305, U.S.A.

関連論文

• Electrical Stress Effects on Mobility of Germanium-On-Insulator (GeOI) pMOSFETs with HfO_2 Gate Dielectric
• Hole Mobility Characteristics under Electrical Stress for Surface-Channel Germanium Transistors with High-$\kappa$ Gate Stack

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