Electrical Stress Effects on Mobility of Germanium-On-Insulator (GeOI) pMOSFETs with HfO_2 Gate Dielectric
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Yi Jeong-hyong
Center For Integrated Systems And Dept. Of Electrical Engineering Stanford University
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OH Saeroonter
Center for Integrated Systems and Dept. of Electrical Engineering, Stanford University
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PHILIP WONG
Center for Integrated Systems and Dept. of Electrical Engineering, Stanford University
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Philip Wong
Center For Integrated Systems And Dept. Of Electrical Engineering Stanford University
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Oh Saeroonter
Center For Integrated Systems And Dept. Of Electrical Engineering Stanford University
関連論文
- Electrical Stress Effects on Mobility of Germanium-On-Insulator (GeOI) pMOSFETs with HfO_2 Gate Dielectric
- Hole Mobility Characteristics under Electrical Stress for Surface-Channel Germanium Transistors with High-$\kappa$ Gate Stack