Improved Terahertz Wave Intensity in Photoconductive Antennas Formed of Annealed Low-Temperature Grown GaAs

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概要

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• We investigated the dependence of terahertz (THz) wave intensity on ex situ annealing temperature of low-temperature-grown gallium arsenide (LT-GaAs). THz waves excited by femtosecond laser pulses were emitted from photoconductive antennas (bow-tie type) formed on LT-GaAs, and the radiation intensity was measured with a Si bolometer. LT-GaAs ex situ annealed at temperatures of 700 °C and above generated 1.4 times higher radiation intensity than unannealed LT-GaAs. Transmission electron microscopy images revealed apparently improved crystal quality, explaining the observed higher carrier mobility and associated radiation intensity.

• 2007-07-15

著者

• OUCHI Toshihiko

  Canon Research Center

• Kasai Shintaro

  Canon Research Center, Canon Inc., 30-2 Shimomaruko 3-chome, Ota-ku, Tokyo 146-8501, Japan

• Watanabe Masatoshi

  Canon Research Center, Canon Inc., 30-2 Shimomaruko 3-chome, Ota-ku, Tokyo 146-8501, Japan

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