Fabrication of Three-Dimensional Photonic Crystal Device for Terahertz Wave
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概要
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We have fabricated a simple-cubic-lattice photonic crystal (PhC) device based on high-resistivity silicon in the terahertz (THz) range by micro-electro-mechanical system (MEMS) techniques. The lattice constant of the three-dimensional (3D) PhC device is 120 μm, resulting in a photonic band gap (PBG) centered at 1 THz. The 3D PhC device was constructed by stacking ten 120-μm-thick chips with periodic pillars and holes patterned respectively on both of their sides by Si deep reactive ion etching. By THz time-domain spectroscopy, the PBG of the device was observed between 0.83 and 1.17 THz in the $\Gamma$–$Z$ direction with a transmittance attenuation of about 35 dB, which is in good agreement with a numerical calculation result.
- 2007-07-25
著者
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OUCHI Toshihiko
Canon Research Center
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Itsuji Takeaki
Canon Research Center, Canon Inc., 3-30-2 Shimomaruko, Ohta-ku, Tokyo 146-8501, Japan
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Tamamori Kenji
Canon Research Center, Canon Inc., 3-30-2 Shimomaruko, Ohta-ku, Tokyo 146-8501, Japan
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Wang Shinan
Canon Research Center, Canon Inc., 3-30-2 Shimomaruko, Ohta-ku, Tokyo 146-8501, Japan
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Kurosaka Ryoji
Canon Research Center, Canon Inc., 3-30-2 Shimomaruko, Ohta-ku, Tokyo 146-8501, Japan
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Ono Haruhito
Canon Research Center, Canon Inc., 3-30-2 Shimomaruko, Ohta-ku, Tokyo 146-8501, Japan
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