Highly Selective SiO2 Etching in Low-Electron-Temperature Inductively Coupled Plasma

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概要

• 論文の詳細を見る

• We develop a new oxide etching system having a low-electron-temperature plasma by setting a grid in the middle of the chamber. The electron temperature is less than 1.1 eV at 15 mTorr. We carry out the etching of silicon dioxide in the system to investigate the etching characteristics in a low-electron-temperature plasma. The etching characteristics after setting the grid are very different from those in the absence of a grid. The low dissociation rate due to the low electron temperature can explain such a difference. With the grid method, we can obtain a high etching selectivity of oxide for the photoresist of 74, which is ten times higher than that in the case without the grid.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-06-15

著者

• CHANG H.

  Department of Materials Science and Engineering, Kwangju Institute of Science and Technology

• KWON G.

  Department of Micro System Engineering, Nagoya University

• Kim H.

  Jusung Engineering Co., Ltd., Etcher Team, #49 Neungpyeong-ri, Opo-eup, Gwangju, Gyeonggi 464-890, Korea

• Bai K.

  Memory Division, Semiconductor Business, Samsung Electronics, San #16 Banwol-ri, Taean-eup, Hwasung, Gyeonggi 445-701, Korea

• Kim J.

  Jusung Engineering Co., Ltd., Etcher Team, #49 Neungpyeong-ri, Opo-eup, Gwangju, Gyeonggi 464-890, Korea

• Kwon G.

  Department of Electrophysics, Kwongwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea

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