Improvement in On/Off Ratio of Pentacene Static Induction Transistors by Controlling Hole Injection Barrier

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概要

• 論文の詳細を見る

• For the realization of high-performance organic static induction transistors (OSITs), it is important to investigate the effect of a hole injection barrier at the interface between a pentacene films and a source electrode in OSITs. In this study, the OSITs based on pentacene films were fabricated on various metallic source electrodes with different work functions and on copper phthalocyanine (CuPc)/indium tin oxide (ITO) electrodes with different CuPc thicknesses. The hole injection barrier was affected by the work function of metallic source electrodes (ITO, Au, and Pt) and the thickness of CuPc (0, 3, and 5 nm). The obtained results demonstrate that a high on/off ratio is achieved when a hole injection barrier with a moderate height is formed at the interface. It was found that controlling the hole injection barrier is effective for improving the characteristics of OSITs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• WATANABE Yasuyuki

  Optoelectronic Industry and Technology Development Association, Advanced Organic Device Project, Chi

• KUDO Kazuhiro

  Optoelectronic Industry and Technology Development Association, Advanced Organic Device Project, Chi

• IECHI Hiroyuki

  Optoelectronic Industry and Technology Develepment Association, Advanced Organic Device Project, Chi

• Iechi Hiroyuki

  Optoelectronic Industry and Technology Development Association, Advanced Organic Device Project, Chiba Laboratory, 1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan

関連論文

• Logic circuits with pentacene and ZnO transistors
• Organic Static Induction Transistors Based on Pentacene Thin Films with Various Source Electrodes
• Improvement of on/off ratio of pentacene static induction transistor with ultra-thin CuPc layer
• Improvement in On/Off Ratio of Pentacene Static Induction Transistors with Ultrathin CuPc Layer
• Inverter Circuits using Pentacene and ZnO Transistors
• Improvement in On/Off Ratio of Pentacene Static Induction Transistors by Controlling Hole Injection Barrier

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