Inverter Circuits using Pentacene and ZnO Transistors
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概要
- 論文の詳細を見る
We report two types of integrated circuits based on a pentacene static-induction transistor (SIT), a pentacene thin-film transistor (TFT) and a zinc oxide (ZnO) TFT. The operating characteristics of a p-p inverter using pentacene SITs and a complementary inverter using a p-channel pentacene TFT and an n-channel ZnO TFT are described. The basic operation of logic circuits at a low voltage was achieved for the first time using the pentacene SIT inverter and complementary circuits with hybrid inorganic and organic materials. Furthermore, we describe the electrical properties of the ZnO films depending on sputtering conditions, and the complementary circuits using ZnO and pentacene TFTs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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WATANABE Yasuyuki
Optoelectronic Industry and Technology Development Association, Advanced Organic Device Project, Chi
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KUDO Kazuhiro
Optoelectronic Industry and Technology Development Association, Advanced Organic Device Project, Chi
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Iechi Hiroyuki
Advanced Technology R&d Center Ricoh Co. Ltd.
関連論文
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