Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method

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概要

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• We investigated the resistivity depth profile of an episystem of a SiGe film on a Si substrate, which was hydrogen-treated by remote plasma by the spreading resistance method. We examined hydrogen penetration by monitoring the resistivity change of the Si substrate due to acceptor passivation by hydrogen. We found that the resistivity of the Si substrate covered by an as-grown SiGe film was not elevated. This indicates that it is extremely difficult for hydrogen atoms to penetrate strained SiGe epi-films. On the other hand, hydrogen atoms can easily penetrate Si films and annealed SiGe films. These results are presumably explained by the misfit strain of epifilms.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-15

著者

• YAMASHITA Yoshifumi

  Graduate School of Natural Science and Technology, Okayama University

• KAMIURA Yoichi

  Graduate School of Natural Science and Technology, Okayama University

• ISHIYAMA Takeshi

  Graduate School of Natural Science and Technology, Okayama University

• Sakamoto Yoshifumi

  Graduate School Of Natural Science And Technology Okayama University

• Sakamoto Yoshifumi

  Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan

関連論文

• Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method
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• Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method

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