Spin-Polarized Hot Electron Injection into Two-Dimensional Electron Gas by Magnetic Tunnel Transistor

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概要

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• A magnetic tunnel transistor has been fabricated on top of a modulation-doped GaAs/AlGaAs heterostructure that provides a high-mobility two-dimensional electron gas. The emitter and base of the magnetic tunnel transistor consisted of a ferromagnetic metal, whereas the collector consisted of the two-dimensional electron gas. Spin polarized hot electrons from the emitter were filtered by the CoFe base layer and then injected into the collector, leading to a finite magnetocurrent ratio. The magnetocurrent ratio decreased as the hot electron energy was increased by increasing the bias voltage between the emitter and the base above a certain threshold voltage. We observed magnetocurrent ratios of ${\sim}27$% at 17 K and ${\sim}2$% at 300 K, indicating that spin-polarized hot electrons are injected into the two-dimensional electron gas from 17 K up to room temperature.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-12-15

著者

• Eom Jonghwa

  Department of Physics and Institute of Fundamental Physics, Sejong University, Seoul 143-747, Korea

• Tae Gikoan

  Department of Physics and Institute of Fundamental Physics, Sejong University, Seoul 143-747, Korea

• Song Jindong

  Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 136-791, Korea

• Kim Kwangyoun

  Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 136-791, Korea

関連論文

• Stray-Field-Driven Switchable Superconducting Devices
• Spin-Polarized Hot Electron Injection into Two-Dimensional Electron Gas by Magnetic Tunnel Transistor
• Gate Controlled Hall Effect Devices

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