Gate Controlled Hall Effect Devices

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概要

• 論文の詳細を見る

• A novel active magnetoelectronic device consisting of a ferromagnetic film and gate electrodes on a GaAs/AlGaAs heterostructure has been fabricated and characterized. Magnetization of the ferromagnetic film is manipulated by external magnetic field which is applied in parallel to the ferromagnetic film axis. Magnetic fringe field at the edge of the ferromagnetic film gives rise to the Hall voltage, which shows hysteretic behavior upon magnetic field sweep. When negative voltage is applied to the gate electrodes, the Hall voltage has increased dramatically. The Hall voltage can be amplified by a factor more than 200.

• Japan Society of Applied Physicsの論文
• 2004-10-01

著者

• Han Suk-hee

  Future Technology Research Division Korea Institute Of Science And Technology

• Song Jindong

  Future Technology Research Division Korea Institute Of Science And Technology

• Eom Jonghwa

  Department of Physics and Institute of Fundamental Physics, Sejong University, Seoul 143-747, Korea

• Eom Jonghwa

  Department of Physics, Sejong University, Seoul 143-747, Korea

• Song Jindong

  Future Technology Research Division, Korea Institute of Science and Technology, Seoul 136-791, Korea

• Jung Donghwa

  Department of Physics, Sejong University, Seoul 143-747, Korea

• Chang Joonyeon

  Future Technology Research Division, Korea Institute of Science and Technology, Seoul 136-791, Korea

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• Gate Controlled Hall Effect Devices

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