Tribology and Removal Rate Characteristics of Chemical Mechanical Planarization Pads Containing Water Soluble Particles
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概要
- 論文の詳細を見る
Novel non-porous pads incorporating different amounts of embedded water soluble particles (WSP) have been characterized and compared to a conventional porous pad for interlayer dielectric (ILD) chemical mechanical planarization (CMP) applications. Removal rate results indicated that polishing with WSP pads was Prestonian in nature (similar to conventional porous pads). A decrease in removal rate at high combinations of pressure and velocity was observed during in-situ conditioning with WSP pads. This anomalous behavior was most likely due to the alternatively feeding and starving the wafer of slurry during in-situ conditioning since doubling the flow rate resolved the problem. The anomalous behavior, however, was not observed when conditioning was performed ex-situ. Frictional analysis indicated that polishing with WSP pads proceeded via boundary lubrication like the other porous pads with concentrically grooved surface geometries.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
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Philipossian A.
Department Of Chemical And Environmental Engineering University Of Arizona
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Philipossian A.
Department of Chemical and Environmental Engineering, University of Arizona, Tucson, AZ, U.S.A.
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Charns L.
Department of Chemical and Environmental Engineering, University of Arizona, Tucson, AZ, U.S.A.
関連論文
- Impact of Wafer Geometry and Thermal History on Pressure and von Mises Stress Non-Uniformity During Chemical Mechanical Planarization
- Tribology and Removal Rate Characteristics of Chemical Mechanical Planarization Pads Containing Water Soluble Particles