Characterization of Argon Fast Atom Beam Source and Application to Mesa Etching Process for GaInP/GaAs Triple-Barrier Resonant Tunneling Diodes

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概要

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• Towards an application for the mesa etching process of semiconductor quantum devices, a saddle-field argon fast atom beam (FAB) source was characterized in terms of energy distribution spectra for residual ions and neutralization coefficient under various process conditions. The neutralization coefficient was evaluated to be in the order of 90% and slightly depended on operating parameters. It was confirmed that a small discharge current and a small discharge voltage contribute to obtaining a high neutralization efficiency. Argon FAB etching was performed to form a mesa structure of GaInP/GaAs triple-barrier resonant tunneling diodes (TBRTDs), and clear negative differential resistance characteristics were obtained with high yields. The FAB etching process also contributes to obtaining a low measured peak voltage in TBRTDs as compared with the case of wet etching.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-06-30

著者

• SUHARA Michihiko

  Division of Electrical and Electric Engineering, School of Science and Engineering, Faculty of Urban

• MATSUZAKA Norihiko

  Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University

• FUKUMITSU Masakazu

  Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University

• OKUMURA Tsugunori

  Division of Electrical and Electric Engineering, School of Science and Engineering, Faculty of Urban

• Fukumitsu Masakazu

  Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan

• Suhara Michihiko

  Division of Electrical and Electric Engineering, School of Science and Engineering, Faculty of Urban Liberal Arts, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan

• Okumura Tsugunori

  Division of Electrical and Electric Engineering, School of Science and Engineering, Faculty of Urban Liberal Arts, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan

• Matsuzaka Norihiko

  Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan

関連論文

• Characterization of Argon Fast Atom Beam Source and Application to Mesa Etching Process for GaInP/GaAs Triple-Barrier Resonant Tunneling Diodes
• Characterization of Argon Fast Atom Beam Source and Application to Mesa Etching Process for GaInP/GaAs Triple-Barrier Resonant Tunneling Diodes

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