Modelling Velocity Saturation Effects in Polysilicon Thin-Film Transistors

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概要

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• By using full-two dimensional (2D) numerical simulations, it is found that, similarly to crystalline silicon, velocity saturation effects occur also in polysilicon thin-film transistors (TFTs). Therefore, precise modelling of output characteristics in short channel polysilicon TFTs should take into account velocity saturation effects, which influence the saturation current. Since full-2D numerical simulations are time consuming and unpractical for circuit simulations, we introduced velocity saturation in the gradual channel approximation (GCA), but still we found a non satisfactory agreement with experimental results, especially for short channel devices. We attributed this behaviour to the presence of a strong longitudinal electric field, that is neglected in GCA, when velocity saturation occurs. So we have developed a new quasi-2D model, that takes in account both carrier velocity saturation and the effects of the longitudinal field, which nicely reproduce the experimental data.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-05-30

著者

• Mariucci L.

  IFN-CNR, Via Cineto Romano 42, 00156 Roma, Italy

• Fortunato G.

  IFN-CNR, Via Cineto Romano 42, 00156 Roma, Italy

• Valletta A.

  IFN-CNR, Via Cineto Romano 42, 00156 Roma, Italy

• Gaucci P.

  IFN-CNR, Via Cineto Romano 42, 00156 Roma, Italy

関連論文

• Effects of Fabrication Parameters on the Electrical Stability of Gate Overlapped Lightly Doped Drain Polysilicon Thin-Film Transistors
• Modelling Velocity Saturation Effects in Polysilicon Thin-Film Transistors

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