Dynamical Study of Single Silver Atoms on Si(111)-$7 \times 7$ Surfaces
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概要
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The dynamics and interactions of silver atoms on Si(111)-$7 \times 7$ surfaces are investigated using variable-temperature scanning tunneling microscopy (STM). The activation energies and pre-exponential factors upon the room temperature are estimated to be 0.81 and 0.9 eV, and $10^{9.65}$ and $10^{10.68}$ for the hopping out of the faulted halves and for hopping out of unfaulted halves, respectively. The behavior exhibited by two silver atoms that jump into a single half-unit cell is also addressed. Details of the tracking of single silver atoms that hop within a $7 \times 7$ half-unit cell are reexamined at ${\sim}80$ K using low-temperature STM. The analytical data revealed that silver atoms diffuse within a $7 \times 7$ unit cells via a corner adatom–rest atom–center adatom–rest atom–corner adatom diffusion pathway in a faulted half under the stress associated with $7 \times 7$ reconstruction.
- 2006-03-15
著者
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Ho Mon-shu
Department Of Physics Center Of Nanoscience And Nanotechnology National Chung Hsing University
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Tsong Tien-Tzou
Institute of Physics, Academia Sinica, Taipei 115, Taiwan
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Su Chih-Chuan
Department of Physics, Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 402, Taiwan
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Ho Mon-Shu
Department of Physics, Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 402, Taiwan
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