Formation of New Beryllium Phosphide in Au(Be)/GaP Thin-Film System

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概要

• 論文の詳細を見る

• A new beryllium phosphide was discovered in a Au/AuBe/Au/p-GaP(111) thin-film system annealed at 500 °C by rapid thermal annealing (RTA). The beryllium phosphide appeared in the shape of a plate in a gold metallization layer near the GaP substrate after RTA. The crystal structure of the beryllium phosphide belongs to the fcc Bravais lattice. The lattice constant of the beryllium phosphide is about 0.4996 nm. The formation of beryllium phosphide was confined to the cubic-to-cubic orientation relationships with that of GaP. The crystal structure of the beryllium phosphide does not pertain to those of any known binary beryllium phosphide systems. Thus, it was concluded that this beryllium phosphide, accordingly, is a new discovery.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-11-15

著者

• Cheng Wei-chun

  Department Of Mechanical Engineering National Taiwan University Of Science And Technology

• Lin Hsin-Li

  Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei 10672, Taiwan, R.O.C.

• Cheng Wei-Chun

  Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei 10672, Taiwan, R.O.C.

関連論文

• Formation of Novel Silicon Nitride with Face-Centered Cubic Crystal Structure in a TaN/Ta/Si(100) Thin Film System
• Formation of New Beryllium Phosphide in Au(Be)/GaP Thin-Film System

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