Formation of Novel Silicon Nitride with Face-Centered Cubic Crystal Structure in a TaN/Ta/Si(100) Thin Film System

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概要

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• We discovered a new silicon nitride with cubic symmetry formed in the silicon at the Ta/Si interface of the TaN/Ta/Si(100) thin film system when the silicon wafer was annealed at 500 or 600°C. The cubic silicon nitride grew into the silicon crystal in the shape of an inverse pyramid after the annealing process. The boundary planes of the inverse pyramid were the {111} planes of the silicon crystal. The orientation relationship between the silicon nitride and silicon crystal is cubic to cubic. The lattice constant of the new silicon nitride is $a=0.5548$ nm and is about 2.2% larger than that of the silicon crystal.

• 2005-07-15

著者

• Cheng Wei-chun

  Department Of Mechanical Engineering National Taiwan University Of Science And Technology

• Jou Shyan-Kay

  Graduate School of Materials Science and Technology, National Taiwan University of Science and Techn

• Chiu Chuei-Fu

  Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei 1

• Chiu Chuei-fu

  Department Of Mechanical Engineering National Taiwan University Of Science And Technology

• Jou Shyan-kay

  Graduate School Of Materials Science And Technology National Taiwan University Of Science And Techno

関連論文

• Formation of Novel Silicon Nitride with Face-Centered Cubic Crystal Structure in a TaN/Ta/Si(100) Thin Film System
• Formation of New Beryllium Phosphide in Au(Be)/GaP Thin-Film System

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