Metal–Oxide–Nitride–Oxide–Semiconductor Memory Device with One-Side Halo Implantation to Enable Low-Voltage Operation Using Hot-Carrier Injection

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概要

• 論文の詳細を見る

• We have developed a metal–oxide–nitride–oxide–semiconductor (MONOS) memory device with one-side halo implantation, in which programming and erasing are performed by channel-hot-electron injection and hot-hole injection, respectively. This MONOS memory has a simple structure and is fabricated through the conventional complementary metal–oxide–semiconductor (CMOS) process before the specific process for the memory device. A threshold voltage shift of more than 3.0 V, obtained through a programming operation, results in a threshold voltage greater than the programming gate voltage and is sufficient to enable the 10-year lifetime of this device.

• 2005-09-15

著者

• Tomiye Hideto

  Sony Corporation Semiconductor Solutions Network Company Atsugi Tec.

• Nomoto Kazumasa

  Sony Corporation Materials Laboratory

• Kobayashi Toshio

  Sony Corporation Semiconductor Solutions Network Company, Atsugi Tec., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

• Koyama Kazuhide

  Sony Corporation Semiconductor Solutions Network Company, Atsugi Tec., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

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• Novel 2-Bit/Cell Metal–Oxide–Nitride–Oxide–Semiconductor Memory Device with Wrapped-Control-Gate Structure That Achieves Source-Side Hot-Electron Injection

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