Novel 2-Bit/Cell Metal–Oxide–Nitride–Oxide–Semiconductor Memory Device with Wrapped-Control-Gate Structure That Achieves Source-Side Hot-Electron Injection

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概要

• 論文の詳細を見る

• We have proposed a novel 2-bit/cell metal–oxide–nitride–oxide–semiconductor memory device with a wrapped gate. Programming and erasing operations are performed by source-side hot-electron injection and hot-hole injection, respectively. Programming speeds of less than 1 μs, programming currents of less than 0.2 μA/μm, and erasing speeds of 10 μs were achieved. In this paper, we describe the abilities of this device and the mechanism of the operation by using a device simulator.

• 2005-07-15

著者

• Tomiye Hideto

  Sony Corporation Semiconductor Solutions Network Company Atsugi Tec.

• Nomoto Kazumasa

  Sony Corporation Materials Laboratory

• Tomiye Hideto

  Sony Corporation Semiconductor Solutions Network Company, Atsugi Tec., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

• Terano Toshio

  Sony Corporation Semiconductor Solutions Network Company, Atsugi Tec., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

• Kobayashi Toshio

  Sony Corporation Semiconductor Solutions Network Company, Atsugi Tec., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan

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• Metal–Oxide–Nitride–Oxide–Semiconductor Memory Device with One-Side Halo Implantation to Enable Low-Voltage Operation Using Hot-Carrier Injection
• Novel 2-Bit/Cell Metal–Oxide–Nitride–Oxide–Semiconductor Memory Device with Wrapped-Control-Gate Structure That Achieves Source-Side Hot-Electron Injection

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