Mobility and Charge Density Tuning in Double-Doped Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistors Grown by Metalorganic Chemical Vapor Deposition

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概要

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• We present mobility and charge density tuning for metalorganic chemical vapor deposition (MOCVD)-grown double-doped enhancement-mode (E-mode) pseudomorphic high-electron-mobility transistors (PHEMTs) by varying the supplier layer doping level and spacer layer thickness. From the resolvable Pendellosung oscillation in double-crystal X-ray diffraction measurements and a pronounced two-dimensional electron-gas peak in capacitance–voltage ($C$–$V$) analyses, good epitaxial wafers are obtained by MOCVD. The 1-μm-gate-length E-mode PHEMT device exhibits a good pinch-off characteristic with a threshold voltage of 0.025 V and a maximum transconductance of 203 mS/mm. The dependences of the pinch-off characteristic in $C$–$V$ measurement on sheet carrier concentration and spacer layer thickness for E-mode PHEMT application is also described in detail.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-08-15

著者

• Lee Chong-yi

  Department Of Electrical Engineering National Tsing Hua University:department Of Electrical Engineer

• Wu Hsin-Yen

  Epistar Co., 5 Li-hsin 5th Rd., Science-Based Industrial Park, Hsinchu, Taiwan 300, Republic of China

• Kuo Kuan-Chu

  Epistar Co., 5 Li-hsin 5th Rd., Science-Based Industrial Park, Hsinchu, Taiwan 300, Republic of China

• Lee Chong-Yi

  Department of Electronic Engineering, I-Shou University, Ta-Hsu Hsiang, Kaohsiung County, Taiwan 840, Republic of China

• Lin Wen-Hsiang

  Epistar Co., 5 Li-hsin 5th Rd., Science-Based Industrial Park, Hsinchu, Taiwan 300, Republic of China

• Shiao Hung-Pin

  Department of Electrical Engineering, Da-Yeh University, Da-Tsuen Hsiang, Chang-Hua, Taiwan 515, Republic of China

関連論文

• Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes : Optics and Quantum Electoronics
• Enhanced Luminescence and Reduced Junction Temperature in n-Type Modulation-Doped AlGaInP Multiquantum-Well Light-Emitting Diodes
• Mobility and Charge Density Tuning in Double-Doped Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistors Grown by Metalorganic Chemical Vapor Deposition
• Elimination of Burn-in Effect in Metal–Organic Chemical Vapor Deposition Grown InGaP/GaAs Heterojunction Bipolar Transistors by Multistep In situ Annealing

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