DNA Analysis Chip Based on Field-Effect Transistors
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概要
- 論文の詳細を見る
We have been developing a genetic field-effect transistor (FET) based on the potentiometric detection of hybridization and intercalation on the Si3N4 gate insulator. In this study, we demonstrated the detection of charge density change as a result of hybridization and intercalation using genetic FETs. Since the electrical output signal is obtained with the genetic FET without any labeling reagent, as compared with the conventional fluorescence-based DNA chips, the genetic FET platform is suitable for a simple and inexpensive system for genetic analysis in clinical diagnostics.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Miyahara Yuji
Biomaterials Center National Institute For Materials Science
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Sakata Toshiya
Biomaterials Center National Institute For Materials Science
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Kamahori Masao
Central Research Laboratory Hitachi Ltd.
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Miyahara Yuji
Biomaterials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Kamahori Masao
Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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