Fabrication of Zinc Oxide Transparent Thin-Film Transistor with ZrO2 Insulating Layer by Sol–Gel Method
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概要
- 論文の詳細を見る
A thin-film transistor consisting of a ZnO active layer and a ZrO2 insulating layer was fabricated on a tin-doped indium oxide sputtered glass substrate as well as on a SiO2/Si wafer. The ZnO and ZrO2 layers were deposited by a sol–gel, dip-coating procedure. The resultant ZrO2 layer was about 150 nm thick and the ZnO layer 70 nm thick. The ZnO layer consisted of a single-grain thickness while the ZrO2 layer consisted of about 10 nm grains and was rather porous. The multilayered film consisting of ZnO/ZrO2/ITO/glass was transparent with 60–85% transmittance in the visible region and exhibited characteristics of a field-effect transistor. The multilayered film of the ZnO/ZrO2/SiO2/Si wafer was also examined and the behavior of the thin-film transistor was confirmed. The ZrO2 layer deposited on the SiO2/Si wafer minimized leakage through the insulating layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Ohya Yutaka
Faculty Of Engineering Gifu University
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Ban Takayuki
Faculty Of Engineering Gifu University
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Kume Takashi
Faculty Of Engineering Gifu University
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Kume Takashi
Faculty of Engineering, Gifu University, Yanagido 1-1, Gifu 501-1193, Japan
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