Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition

スポンサーリンク

概要

• 論文の詳細を見る

• A ZnO thin film was deposited on a Si wafer having an oxidized SiO2 layer using a chemical solution deposition process and was applied to a bottom-gate type thin film transistor (TFT). The films prepared by combined heating at 600$^\circ$ and 900$^\circ$C exhibited typical enhancement-type TFT characteristics with electrons as carriers. The low heating temperature around 600$^\circ$C degraded the insulating properties of the SiO2 layer but high temperature annealing recovered that.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2001-01-15

著者

• Ohya Yutaka

  Faculty Of Engineering Gifu University

• TAKAHASHI Yasutaka

  Faculty of Engineering, Gifu University

• Ban Takayuki

  Faculty Of Engineering Gifu University

• Niwa Tsukasa

  Faculty Of Engineering Gifu University

• Niwa Tsukasa

  Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan

• Ohya Yutaka

  Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan

関連論文

• Lead Zirconate Titanate Thick Films Fabricated from Sols with and without Its Powder(Surfaces, Interfaces, and Films)
• Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition
• Fabrication of Zinc Oxide Transparent Thin-Film Transistor with ZrO_2 Insulating Layer by Sol-Gel Method
• Diversity of the Cuticle Layer of Avian Eggshells
• Influence of Na_2O contamination on changing the cristobalite phase into amorphous in mullite ceramics with excess silica
• Fabrication of Zinc Oxide Transparent Thin-Film Transistor with ZrO2 Insulating Layer by Sol–Gel Method
• Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition

スポンサーリンク