Electrical Prestressing of High-Electric-Field Conduction in Composite of Low-Density Polyethylene/Nano-SiOx
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概要
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An electrical prestressing in a composite of low-density polyethylene (LDPE)/nano-SiOx was observed when measuring high-electric-field conduction in the composite. This means that the DC conduction of a composite after being electrically prestressed with a high DC electrical field (about $8\times 10^{7}$ V/m) for 2 h was lower than that of a non-prestressed composite. It is interesting that the electrical prestressing becomes more distinct with increasing nano-SiOx content. The interfaces between nano-SiOx particles and LDPE molecules were investigated by transmission electron microscopy (TEM), so did the dispersal status of nano-SiOx in LDPE. The effects of nano-SiOx on the crystallinity and crystal morphology of LDPE were verified by X-ray diffraction (XRD) analysis. In addition, the interaction between nano-SiOx particles and LDPE molecules was studied by Fourier transform infrared (FTIR) spectroscopy. Finally, the relationship between the electrical prestressing of high-electric-field conduction and the microscopic structure of a LDPE/nano-SiOx composite was discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
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Yin Yi
Department Of Electrical Engineering School Of Electronics Information And Electrical Engineering Sh
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CHEN Jiong
Department of Electrical Engineering, Shanghai Jiao Tong University
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Xiao Dengming
Department Of Electrical Engineering Shanghai Jiaotong University
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Li Zhe
Department of Electrical Engineering, School of Electronics and Electrical Engineering, Shanghai Jiao Tong University, Dongchuan Road 800, Minhang, Shanghai 200240, China
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Yin Yi
Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200030, China
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Xiao Dengming
Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200030, China
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Li Zhe
Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200030, China
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