Photocarrier Injection and Current–Voltage Characteristics of La0.8Sr0.2MnO3/SrTiO3:Nb Heterojunction at Low Temperature
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概要
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An epitaxial heterojunction made of a $ p$-type perovskite manganite La0.8Sr0.2MnO3 film and an $n$-type strontium titanate SrTiO3:Nb substrate has been fabricated by the pulsed laser deposition technique. The current–voltage ($I$–$V$) characteristics and photovoltaic properties are measured under UV light irradiation in a wide temperature range down to 10 K. It is found that the junction acts as an efficient UV photodiode with a large external quantum efficiency of 28%. It is also demonstrated that the manganite film can be doped with a certain amount of holes by photocarrier injection. The maximum surface hole density is estimated to be $3.0\times 10^{13}$ cm-2.
- 2005-10-15
著者
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Hiroi Zenji
Institute For Chemical Research Kyoto University
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Muraoka Yuji
Institute For Solid State Physics University Of Tokyo
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Muramatsu Takaki
Institute For Solid State Physics University Of Tokyo
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Muraoka Yuji
Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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Muramatsu Takaki
Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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