Substrate Deformation Studies on Direct Overwriting of Phase-Change Rewritable Optical Disc with Germanium Nitride Interface Layers
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概要
- 論文の詳細を見る
The deformation of polycarbonate substrate during direct-overwriting (DOW) process of phase-change (PC) optical disc with germanium nitride (Ge-N) interface layers was studied. From scanning probe microscopy (SPM) results, the deformation of the land/groove caused by thermal energy during the writing process was highly reduced by the Ge-N interface layers. The Ge-N interface layers not only prevent sulfur atom diffusion into the PC layer during DOW, but also protect the substrate from thermal damage. Therefore, the optical disc with Ge-N interface layers achieved DOW cycles 2 orders higher than that of the conventional rewritable disc. The substrate deformation lifetime during the DOW process was multiplied by approximately 100 times.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
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Chong T.
Data Storage Inst. Singapore
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Shi L.
Data Storage Institute
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MIAO X.
Data Storage Institute
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MENG H.
Data Storage Institute
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WONG K.
Data Storage Institute
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Lim K.
Data Storage Inst. Singapore
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Tan P.
Data Storage Inst. Singapore
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Miao X.
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
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Chong T.
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
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Lim K.
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
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Tan P.
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
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Shi L.
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
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Meng H.
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
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