Properties and Reactive Sputtering Parameters of GeN Film for High-Density Phase-Change Optical Disk
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概要
- 論文の詳細を見る
The dependence of optical and thermal properties of phase-change optical disks on the diffusion of sulfur atoms from ZnS–SiO2 dielectric layers into a GeSbTe phase-change recording layer was simulated. The influence of reactive sputtering parameters on the properties of GeN films has also been studied. Significant improvement in the direct overwriting cycles was achieved in the 4.7 GB digital versatile disk-random access memory (DVD-RAM) disk with a GeN interface layer after optimizing the sputtering parameters of the GeN film.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-30
著者
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LI J.
Data Storage Institute
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SHI L.P.
Data Storage Institute, DSI Building
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Lim K.
Data Storage Inst. Singapore
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Chong T.c.
Data Storage Institute 5 Engineering Drive 1(off Kent Ridge Crescent Nus)
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Tan P.
Data Storage Inst. Singapore
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Miao X.
Data Storage Institute, 5 Engineering Drive 1, Singapore 117680
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Chong T.
Data Storage Institute, 5 Engineering Drive 1, Singapore 117680
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Li J.
Data Storage Institute, 5 Engineering Drive 1, Singapore 117680
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Mial X.S.
Data Storage Institute, 5 Engineering Drive 1, Singapore 117680
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Lim K.
Data Storage Institute, 5 Engineering Drive 1, Singapore 117680
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