Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography

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概要

• 論文の詳細を見る

• The impact of latent image quality on line edge roughness (LER) in 100, 50 and 2 keV electron beam lithography was investigated. There is a minimum LER of about 2 nm achievable with current resist systems though the LER increases as a result of the amplification of bandwidth of the threshold level by the slope of the quasi-beam profile (QBP), which is a latent image profile in which the line spread function is assumed to be Gaussian. A plausible cause of the minimum LER is the domain size of resist materials such as polymer/monomer aggregation. Analysis of the LER dependence on the 1/slope revealed the origins of the bandwidth of the threshold level: variation of the latent image profile in terms of image blur and intensity. Independent of the electron energies and resists used, the resolution of an isolated line was proportional to the blur of the QBP with an intrinsic resolution of the resists about 5 nm which has been ignored for photolithography.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-15

著者

• YOSHIZAWA Masaki

  Lithography Tech. Dept., Sony Corporation MSNC

• MORIYA Shigeru

  Lithography Tech. Dept., Sony Corporation MSNC

• NAKANO Hiroyuki

  Lithography Tech. Dept., Sony Corporation MSNC

• SHIRAI Yuichi

  Dept. of Physical Electronics, Tokyo Institute of Technology

• MORITA Tatsuo

  Nanotechnology Support Project, Research Center for Quantum Effect Electronics, Tokyo Institute of T

• KITAGAWA Tetsuya

  Lithography Tech. Dept., Sony Corporation MSNC

• MIYAMOTO Yasuyuki

  Dept. of Physical Electronics, Tokyo Institute of Technology

• Shirai Yuichi

  Dept. of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

• Kitagawa Tetsuya

  Lithography Tech. Dept., Sony Corporation MSNC, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014, Japan

• Morita Tatsuo

  Nanotechnology Support Project, Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

• Moriya Shigeru

  Lithography Tech. Dept., Sony Corporation MSNC, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014, Japan

• Miyamoto Yasuyuki

  Dept. of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

• Yoshizawa Masaki

  Lithography Tech. Dept., Sony Corporation MSNC, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014, Japan

関連論文

• Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography
• Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography

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