A Workable Use of the Floating-Body Silicon-On-Sapphire MOSFET as a Transconductance Mixer

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概要

• 論文の詳細を見る

• The operation, biasing, and measured performances of the floating-body silicon-on-sapphire (SOS) MOSFET as a single-gate FET upconversion mixer are presented. Despite the floating-body effects of the SOS MOSFET, the upconversion RF mixer operation is feasible by utilizing the approximate square-law transfer characteristics of the SOS MOSFETs. With a drawn gate length $L_{\text{min}}=0.8$ μm, the single-gate SOS MOSFET mixer gives an approximately 1.5-dB power conversion gain, an input-referred third-order intercept point (IP3) of 5 dBm while requiring a local oscillator (LO) power of 5.5 dBm with an RF bandwidth of 2 GHz and an IF bandwidth of 400 MHz. The current consumption is about 8 mA with a 3 V voltage supply. The realization of a high output bandwidth and high IF RF mixer is demonstrated to be possible with the floating-body SOS MOSFET.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• Lee Wai-kit

  Department Of Electrical And Electronic Engineering The Hong Kong University Of Science & Techno

• Chan Mansun

  Department Of Electrical And Electronic Engineering Hong Kong University Of Sci. & Tech.

• Lam Sang

  Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology

• Ko Ping

  Department Of Civil And Structural Engineering The Hong Kong Polytechnic University

• Mok Philip

  Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong

• Lee Wai-Kit

  Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong

• Chan Alain

  Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong

• Chan Mansun

  Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong

• Ko Ping

  Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Clear Water Bay, Kowloon, Hong Kong

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