Fabrication of InP-based Optoelectronic Integrated Circuit (OEIC) Photoreceivers Using Shared Layer Integration of Heterojunction Bipolar Transistors and Refracting-Facet Photodiodes

概要

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InP-based monolithic photoreceivers have been fabricated using a shared layer integration scheme of refracting-facet photodiodes (RFPDs) and heterojunction bipolar transistors (HBTs). An HBT was fabricated using a self-aligned emitter-base process and nonalloyed metallization of the emitter, base and collector ohmic contacts. The fabricated $2\times 10$ μm2 emitter HBT exhibited a maximum current gain of 40. The maximum cutoff frequencies of this HBT were measured to be $f_{\text{T}}=79$ GHz and $f_{\text{max}}=143$ GHz at $I_{\text{C}}=19$ mA and $V_{\text{CE}}=1.5$ V, respectively. An RFPD was fabricated using the base-collector junction layers of the HBT based on the selective wet chemical etching characteristics of InP and InGaAs layers. The fabricated RFPD showed a 37% increased optical responsivity of 0.48 A/W compared to the fabricated surface-illuminated photodiode using the same photoreceiver epitaxial layer. The full width at half maximum (FWHM) of the fabricated RFPD was determined to be 24 ps using the standard 50 $\Omega$ system load. The fabricated three-stage transimpedance amplifier (TIA) showed a transimpedance gain of 46 dB$\Omega$ and a $-3$ dB bandwidth of 12 GHz. The fabricated monolithic RFPD/HBT photoreceiver has demonstrated a $-3$ dB optical bandwidth of 6.9 GHz.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-04-15