Enhanced Breakdown Characteristic of AlGaN/GaN HEMTs Using a Gate/Drain Double Field-Plate Structure
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Kim Seunghun
Division Of Electrical Engineering Dept. Of Electrical Engineering And Computer Science (eecs) Korea
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Yang Kyounghoon
Division Of Electrical Engineering Dept. Of Electrical Engineering And Computer Science (eecs) Korea
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Yang Kyounghoon
Division Of Electrical Engineering Dept. Of Electrical Engineering And Computer Science (eecs) Korea
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- Enhanced Breakdown Characteristic of AlGaN/GaN HEMTs Using a Gate/Drain Double Field-Plate Structure
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