Nanometer Trench Fabricated by Atomic Force Microscopy
スポンサーリンク
概要
- 論文の詳細を見る
Nanometer trenches were successfully produced by NaOH etching of the Ti oxide lines produced by atomic force microscopy (AFM) anodization on Ti thin films of 6 nm thickness on Si thermal oxidation films. The full width at half maximum (FWHM) of a nanometer trench is estimated to be approximately 20 nm, which is comparable to the radius of curvature of the AFM cantilever. It is found that the etching rate of the Ti oxide lines produced by AFM anodization depends on oxide lines height. The selection ratio of etching rate of the Ti thin film and oxide lines is 10 for oxide lines of 2 nm height, the etching rates being approximately 0.08 and 0.87 nm/min, respectively. Ti nanometer wires having 20 nm FWHM could be formed from two nanometer trenches placed close together in parallel.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
-
Aizawa Kouji
Department Of Electronics And Computer Engineering Tokyo Polytechnic University
-
Fujihashi Chugo
Department Of Applied Computer Science Faculty Of Engineering Tokyo Polytechnic University
-
Yukiya Tokio
Department Of Applied Computer Science Faculty Of Engineering Tokyo Polytechnic University
-
Aizawa Kouji
Department of Electronics and Computer Engineering, Tokyo Polytechnic University, Iiyama 1583, Atsugi City, Kanagawa 243-0297, Japan
-
Yukiya Tokio
Department of Electronics and Computer Engineering, Tokyo Polytechnic University, Iiyama 1583, Atsugi City, Kanagawa 243-0297, Japan
-
Fujihashi Chugo
Department of Electronics and Computer Engineering, Tokyo Polytechnic University, Iiyama 1583, Atsugi City, Kanagawa 243-0297, Japan
関連論文
- Parallel Read-Out High-Speed Input Buffer ATM Switch Architectures
- A Multi Synchronization Shared Buffer ATM Switch to relieve Multistage System High-Speed Clock Difficulty in VLSI
- Electron and Hole Current Switching n-i-p-Type Semiconductor Quantum Dot Transistor
- All Error Detecting Modified Hamming Codes for Ideal Optical Channel and Application to Practical System
- Nanometer Trench Fabricated by Atomic Force Microscopy