Exchange Coupling in Silicon Double Quantum Dots
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概要
- 論文の詳細を見る
An exchange coupling between localized electron spins is evaluated in silicon double quantum dots, taking account of electron-electron interaction exactly. A multivalley structure of conduction band is taken into account within the effective mass approximation. We show that the intervalley tunneling between the quantum dots plays an important role in the exchange coupling. The exchange coupling can be controlled by gating the central electrode of the double quantum dots, which is applicable to two-qubit gate operation for quantum computation using the electron spins.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
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Eto Mikio
Faculty Of Science And Technology Keio University
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Hada Yoko
Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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